Nitrid-Halbleiterlaservorrichtung

摘要

A nitride semiconductor laser device comprising, on a principal face of a nitride semiconductor substrate (101): a nitride semiconductor layer (203) having a first conductivity type; an active layer (205); and a nitride semiconductor layer (208) having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge (209); wherein the said principal face of said nitride semiconductor substrate (101) has an off angle a (θa) in a direction substantially perpendicular to the M plane (1–100) and substantially parallel to said stripe ridge (209); characterized in that said principal face further has an off angle b (θb) in a direction substantially parallel to the M plane (1–100) and substantially orthogonal to said stripe ridge (209), and satisfying the relationship |θa| > |θb| > 0,wherein said principal face of said nitride semiconductor substrate (101) comprises a first region comprising the C face (0001) and a second region having at least a crystal growth face different from that of said first region, wherein the first region and the second region have polarities separated as stripes.