METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR

摘要

The present invention relates to a method for manufacturing an oxide thin film transistor. The method comprises the steps of: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an oxide semiconductor layer including a channel layer on the gate insulating layer; forming a source electrode and a drain electrode spaced apart from each other at a regular interval on the oxide semiconductor layer; primarily treating the substrate having the source and drain electrodes formed thereon by plasma under a carbon atmosphere; secondarily treating the primarily treated substrate by plasma under a nitrogen oxide atmosphere for surface treatment of the channel layer; and sequentially forming a first protective layer and a second protective layer on the primarily and secondarily treated substrate.