SEMICONDUCTOR MEMORY DEVICE AND DATA ERASING METHOD

摘要

A semiconductor memory device includes a memory cell array including a plurality of groups of memory cells above a substrate, the groups including a first group and a second group, each of the first and second groups including a first memory string and a second memory string, the first memory string including first memory cells that are disposed in a first layer, the second memory string including second memory cell that are disposed in a second layer above the first layer, and a controller configured to perform an erasing operation on the memory cells, the erasing operation including a verifying operation on the memory cells to determine on a layer by layer basis whether the memory cells failed to erase data stored therein.

主权项

1. A semiconductor memory device comprising:
a memory cell array including a first memory string and a second memory string, the first memory string including memory cells that are disposed in a first layer, the second memory string including memory cells that are disposed in a second layer above the first layer; and a controller configured to perform an erasing operation on the memory cells, the erasing operation including a first period during which an erasing pulse is applied to the memory cells of the second memory string and not the memory cells of the first memory string, and a second period directly after the first period during which the erasing pulse is applied to the memory cells of the first memory string and the memory cells of the second memory string.