STORAGE DEVICE INCLUDING MAGNETIC ELEMENTS

摘要

A storage device according to an embodiment includes: first and second magnetic elements each including: a reference layer connected to a third terminal; a first magnetic layer including first through third magnetic regions; a nonmagnetic layer; a second magnetic layer connected to a first terminal and the first magnetic region; and a third magnetic layer connected to a second terminal and the third magnetic region; a first inverter including a p-channel first transistor, an n-channel second transistor, a first input terminal connected to the second terminal of the second magnetic element, and a first output terminal connected to the first terminal of the first magnetic element; and a second inverter including a p-channel third transistor, an n-channel fourth transistor, a second input terminal connected to the second terminal of the first magnetic element, and a second output terminal connected to the first terminal of the second magnetic element.

主权项

1. A storage device comprising:
first and second magnetic elements each including first through third terminals, each of the first and second magnetic elements including: a first magnetic layer including first through third magnetic regions, the second magnetic region being located between the first magnetic region and the third magnetic region; a second magnetic layer connected to the first terminal and the first magnetic region; and a third magnetic layer connected to the second terminal and the third magnetic region, the third magnetic layer having a different magnetization direction from a magnetization direction of the second magnetic layer; a fourth magnetic layer connected to the third terminal and facing the second magnetic region; and a nonmagnetic layer disposed between the second magnetic region and the fourth magnetic layer; a first inverter including a p-channel first transistor, an n-channel second transistor, a first input terminal, and a first output terminal, the first input terminal being connected to the second terminal of the second magnetic element, the first output terminal being connected to the first terminal of the first magnetic element; and a second inverter including a p-channel third transistor, an n-channel fourth transistor, a second input terminal, and a second output terminal, the second input terminal being connected to the second terminal of the first magnetic element, the second output terminal being connected to the first terminal of the second magnetic element.