METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY

摘要

A method for determining an optimized write pattern for low write error rate operation of a spin torque magnetic random access memory. The method provides a way to optimize the write error rate without affecting the memory speed. The method comprises one or more write pulses. The pulses may be independent in amplitude, duration and shape. Various exemplary embodiments adjust the write pattern based on the memory operating conditions, for example, operating temperature.

主权项

1. A method of writing to a magnetoresistive memory cell in a magnetic random access memory, wherein data is stored in a magnetic state of the magnetoresistive memory cell based on a magnetization vector of a free layer relative to a magnetization vector of a fixed layer, the method comprising:
applying a write pulse pattern to the magnetoresistive memory cell to write data into the magnetoresistive memory cell by setting the magnetic state of the magnetoresistive memory cell, the write pulse pattern consists essentially of:
a first write pulse having a first amplitude and a first pulse duration;a second write pulse having the first amplitude and the first pulse duration; andwherein the first write pulse and the second write pulse are consecutive write pulses separated by a delay period without an intervening read operation.