发明名称 |
PRODUCTION OF INDIUM PHOSPHIDE SINGLE CRYSTALLINE WAFER AND INDIUM PHOSPHIDE SINGLE CRYSTAL WAFER |
摘要 |
PROBLEM TO BE SOLVED: To improve the yield of an indium phosphide substrate for a radiation detection element containing zinc as an impurity.SOLUTION: An indium phosphide wafer 1 according to the invention has a p-type carrier concentration of 1×10cmto 1×10cm. When a portion 11 having a center aligned to the center of a principal plane and enclosed by a concentric circle having a radius shorter by 5 mm than that of the principal plane is divided into a plurality of regions and when the individual life time τ are measured, the life time τ are 45 μs within 90% or more of the whole area, and the relative standard deviation (σ/Ave.) of each life time τ is 12% or less.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016183086(A) |
申请公布日期 |
2016.10.20 |
申请号 |
JP20150065509 |
申请日期 |
2015.03.27 |
申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
ITANI MASAYA;KAWAHIRA KEITA |
分类号 |
C30B29/40 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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