| 摘要 |
Provided is a pre-rinsing liquid which is used in a method for forming a pattern on a substrate by forming, on the substrate, a resist film that is formed from an active light sensitive or radiation sensitive composition and irradiating the resist film with active light or radiation, and which is used for the purpose of performing a pre-rinsing treatment on the substrate before applying the active light sensitive or radiation sensitive composition onto the substrate. This pre-rinsing liquid satisfies the conditions (1) and (2) described below, and enables the formation of a pattern that has excellent sensitivity, cross-sectional shape, resolution and residue defect performance, especially in the formation of an ultra thin pattern (for example, one having a line width of 50 nm or less). Also provided are: a pre-rinsing method using this pre-rinsing liquid; and a pattern forming method. (1) The pre-rinsing liquid contains 80% by mass or more of an organic solvent with respect to the total mass of the pre-rinsing liquid. (2) The above-described organic solvent is composed of one or more organic solvents that are selected from the group consisting of alcohols, cyclic ethers, glycol ethers, glycol ether acetates, hydrocarbons, ketones, lactones, and esters. |
