发明名称 |
Method of forming contact plug on silicide structure |
摘要 |
A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
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申请公布号 |
US6884736(B2) |
申请公布日期 |
2005.04.26 |
申请号 |
US20020265937 |
申请日期 |
2002.10.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD. |
发明人 |
WU CHII-MING;WANG MEI-YUN;CHANG CHIH-WEI;HSIEH CHIN-HWA;SHUE SHAU-LIN;FU CHU-YUN;HSU JU-WANG;TSAI MING-HUAN;CHIU YUAN-HUNG |
分类号 |
H01L21/311;H01L21/60;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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