MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To increase the yield of a self-aligned heterojunction bipolar transistor by preventing a leveling. resist from peeling when a dummy layer 7 is etched. CONSTITUTION:A method is provided for manufacturing a self-aligned heterojunction bipolar transistor. When a self-aligned base is formed, a dummy layer 7 on an emitter mesa 50 is not completely covered with the base material.