| 摘要 |
PURPOSE:To enhance the uniformity of pattern formation of a transparent material and light shielding member in production of the mask and to improve the controllability of the fine line width formed by exposing by disposing dummy patterns on the mask. CONSTITUTION:The fine patterns to be resolved of the mask for exposing to be used for an edge transmission type phase shift method are only the light shielding member parts 100. The light shielding material and the transparent material 3 exclusive thereof are dummy patterns. The line widths 200, 300 of the transparent material part 200 and transparent substrate part 300 are lambda/(NAXM) (lambda is the wavelength of exposing light 6: NA is the numerical aperture of a photographic lens; M is a projection magnification). The line widths L200, L300 are made >=2 times the sum of the registration accuracy a in registration exposure of the mask and the registration accuracy b in multiple exposure using the light shielding material parts 400 of the ensuing stage. As a result, the light intensity A distribution by dummy patterns is made into the resolving light intensity B or above and therefore, only the fine width of the light shielding material part 100 position is resolved. |
