METHOD FOR INTRODUCING IMPURITY INTO II-VI COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To provide a new method for introducing nitrogen impurity into crystal at the time of growing II-VI compound semiconductor crystal. CONSTITUTION:II-VI compound semiconductor crystal is grown by introducing the II-VI compound semiconductor composition elements, impurity element material and material gas into a crystal growing device. Nitrogen trifluoride (NF3) is used as impurity nitrogen material gas and the quantity of the gas is controlled to be 5% or less of the whole gas quantity to be introduced for the growth so as to permit nitrogen to enter the II-VI compound semiconductor.