发明名称 |
CHEMICAL-MECHANICAL POLISHING SLURRY FORMULATION AND METHOD FOR TUNGSTEN AND TITANIUM THIN FILMS |
摘要 |
A polishing slurry composition and its method of making for planarization of silicon semiconductor wafers by chemical mechanical polishing of the wafer. A slurry formulation utilizing a ferric salt tungsten oxidizer, an ammonium persulfate titanium oxidizer, a fatty acid suspension agent, alumina particles with a small diameter and tight diameter range, coated with a solubility coating, and a chemical stabilizer, provides high tungsten and titanium polish rates with high selectivity to silicon dioxide, and good oxide defectivity for use in tungsten local interconnect applications. A method for making a tungsten slurry includes first thoroughly blending small diameter alumina particles with a tight diameter range in an aqueous concentrate with a suspension agent, then mixing with water and oxidizers. Ferric salt tungsten slurries made by this method provide excellent tungsten polish characteristics for via plug and local interconnect applications.
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申请公布号 |
WO9842791(A1) |
申请公布日期 |
1998.10.01 |
申请号 |
WO1998US06007 |
申请日期 |
1998.03.26 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AVANZINO, STEPHEN, C.;WOO, CHRISTY, MEI-CHU;SCHONAUER, DIANA, MARIE;BURKE, PETER, AUSTIN |
分类号 |
C09G1/02;C09K3/14;H01L21/321;(IPC1-7):C09G1/02 |
主分类号 |
C09G1/02 |
代理机构 |
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