| 摘要 |
PROBLEM TO BE SOLVED: To inexpensively and simply form a high quality thick indium oxide film usable for various application such as optical devices by electroless plating at a relatively low temp. by using an aq. solution containing at least a nitrate ion, an indium ion and a tartrate. SOLUTION: The electroless indium oxide plating aq. solution is obtained by incorporating the tartrate, preferably sodium tartrate or sodium potassium tartrate with a nitrate ion and an indium ion. The concentration of the aq. solution is preferably 0.001-0.5 mol/l nitrate ion, 0.001-0.5 mol/l indium ion and 0.00001-0.1 mol/l tartrate, which is 1/2000-1/5 of the indium concentration. The ion source of the nitrate ion and the indium ion is preferably indium nitrate. The high quality indium oxide film is deposited at film forming rate of 0.01-10Å/s by adjusting the plating aq. solution to be at 10-60 deg.C and 3-9 in pH and dipping a base body thereinto.
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