| 摘要 |
According to disclosed embodiments, a semiconductor memory (100) can include a restore voltage control circuit (106) that can supply a first internal voltage VINT that is lower than an external power supply voltage Vcc, a second internal voltage VINTS1 that is lower than the first internal voltage VINT, and a third internal voltage VINT2 equal to or less than the first internal voltage VINT and greater than the second internal voltage VINTS1. The semiconductor memory (100) can further include a p-channel MOS transistor (T108) that can provide a conductive path between a voltage supply path (116) and a sense amplifier (104) in response to a sense signal Se at the first internal voltage VINT. A switch signal generating circuit (112) can supply a switch signal Sw that can change the potential on the voltage supply path (116) from the second internal voltage VINTS1 to the third internal voltage VINTS2 while transistor T108 is conductive.
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