| 摘要 |
A reflection-type mask for use in exposing a pattern onto a photosensitive material, wherein the mask includes a reflection area, having a multilayer film, for reflecting exposure light, and a non-reflection area which does not reflect the exposure light, the reflection area and the non-reflection area forming a mask pattern, wherein at least one layer of the multilayer film consists of an impurity semiconductor, whereby bad influences, for example, caused by poor conduction of the multilayer film at mask-production stage, can be prevented. |
