SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a device for etching a layer or sputter-depositing a layer for improving the uniformity.

SOLUTION: In a plasma deposition device for depositing a sputtered target material on a substrate, capacitance in an impedance-matching box for an RF coil is varied during the deposition process in such a manner that heating of the RF coil and the substrate and the film deposition become more uniform according to "time-averaging" of the RF voltage distribution along the RF coil.

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