| 摘要 |
The process for crystallization of semiconductor materials e.g. silicon and insulating materials e.g. silicon oxide, comprises depositing multiple thin layers (3) made of amorphous or polycrystalline material on an area of the surface of an upper part (2) of a substrate (1), depositing multiple metal layers (4) having a thickness of 5-10 nm on an area of the thin layer, and heat treating (F2) crystal growth of the thin layer material thus causing a rise of temperature of the upper part of the substrate at a speed greater than 100 K per second. The process for crystallization of semiconductor materials e.g. silicon and insulating materials e.g. silicon oxide, comprises depositing multiple thin layers (3) made of amorphous or polycrystalline material on an area of the surface of an upper part (2) of a substrate (1), depositing multiple metal layers (4) having a thickness of 5-10 nm on an area of the thin layer, and heat treating (F2) crystal growth of the thin layer material thus simultaneously causing a rise of temperature of the upper part of the substrate at a speed greater than 100 K per second and transferring heat from the interface between the upper part of the substrate and the thin layer towards the interface between the thin layer and the metal layer. The upper part of the substrate is constituted by an amorphous material able to pass through a liquid state or over molten liquid after depositing the metal layer. The heat treatment is performed by applying a continuous or pulsed laser beam having an emission wavelength range corresponding to the wavelength range of absorption of the upper part of the substrate and the wavelength range of transparency of the amorphous or polycrystalline material of the thin film. The absorption coefficient of the upper part of the substrate is three times greater than that of the thin film to be crystallized in the emission wavelength range of the laser beam. The laser beam is obtained from carbon dioxide or yttrium aluminum garnet laser source. The upper part of the substrate is crystalline before depositing the thin layer and amorphous after depositing the thin or metal layer, and is constituted by a material of glass, ceramics, non-crystalline polymers, metals and metal alloys. The substrate is entirely made of amorphous material before the heat treatment. |
