发明名称 Electronic device and method for fabricating the same
摘要 An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first planes and a plurality of second planes which are disposed over a substrate and alternately stacked in a vertical direction over the substrate, where each of the first planes includes a plurality of first lines which extends in a first direction parallel to the substrate and each of the second planes includes a plurality of second lines which extends in a second direction parallel to the substrate and intersecting with the first direction, a plurality of variable resistance patterns which is interposed between each of the first planes and each of the second planes, each of the variable resistance patterns being disposed at a cross point between a first line and a corresponding second lines, and an air-gap which is disposed between neighboring variable resistance patterns.
申请公布号 US9385312(B2) 申请公布日期 2016.07.05
申请号 US201414276837 申请日期 2014.05.13
申请人 SK HYNIX INC. 发明人 Lee Jae-Yeon
分类号 H01L45/00;H01L27/24;G06F3/06 主分类号 H01L45/00
代理机构 代理人
主权项 1. An electronic device comprising a semiconductor memory unit, the semiconductor memory unit comprising: one or more first planes and one or more second planes, the first and second planes being alternately stacked in a vertical direction over the substrate, each of the first planes including a plurality of first lines extending in a first horizontal direction, each of the second planes including a plurality of second lines extending in a second horizontal direction, the second horizontal direction intersecting with the first horizontal direction; a plurality of variable resistance patterns interposed between each of the first planes and a corresponding one of the second planes, each of the variable resistance patterns being disposed at a cross point between a first line and a corresponding second line; and an air-gap disposed between neighboring variable resistance patterns that are at substantially the same level in the vertical direction, wherein the air-gap extends in the vertical direction to penetrate through the first and second planes in a region enclosed by two neighboring first lines and corresponding two neighboring second lines.
地址 Icheon KR