发明名称 |
Electronic device and method for fabricating the same |
摘要 |
An electronic device includes a semiconductor memory. The semiconductor memory includes a plurality of first planes and a plurality of second planes which are disposed over a substrate and alternately stacked in a vertical direction over the substrate, where each of the first planes includes a plurality of first lines which extends in a first direction parallel to the substrate and each of the second planes includes a plurality of second lines which extends in a second direction parallel to the substrate and intersecting with the first direction, a plurality of variable resistance patterns which is interposed between each of the first planes and each of the second planes, each of the variable resistance patterns being disposed at a cross point between a first line and a corresponding second lines, and an air-gap which is disposed between neighboring variable resistance patterns. |
申请公布号 |
US9385312(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201414276837 |
申请日期 |
2014.05.13 |
申请人 |
SK HYNIX INC. |
发明人 |
Lee Jae-Yeon |
分类号 |
H01L45/00;H01L27/24;G06F3/06 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
|
主权项 |
1. An electronic device comprising a semiconductor memory unit, the semiconductor memory unit comprising:
one or more first planes and one or more second planes, the first and second planes being alternately stacked in a vertical direction over the substrate, each of the first planes including a plurality of first lines extending in a first horizontal direction, each of the second planes including a plurality of second lines extending in a second horizontal direction, the second horizontal direction intersecting with the first horizontal direction; a plurality of variable resistance patterns interposed between each of the first planes and a corresponding one of the second planes, each of the variable resistance patterns being disposed at a cross point between a first line and a corresponding second line; and an air-gap disposed between neighboring variable resistance patterns that are at substantially the same level in the vertical direction, wherein the air-gap extends in the vertical direction to penetrate through the first and second planes in a region enclosed by two neighboring first lines and corresponding two neighboring second lines. |
地址 |
Icheon KR |