发明名称 |
Phase change memory structure comprising phase change alloy center-filled with dielectric material |
摘要 |
A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film; at least partially filling the open core volume with alumina or other dielectric material; and forming a top electrode at an upper portion of the cavity. |
申请公布号 |
US9385310(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201313872087 |
申请日期 |
2013.04.27 |
申请人 |
ENTEGRIS, INC. |
发明人 |
Zheng Jun-Fei |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
Hultquist, PLLC |
代理人 |
Hultquist, PLLC ;Hultquist Steven J.;Chappins Maggie |
主权项 |
1. A phase change memory structure, comprising a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein said cavity is bounded by side wall surface, wherein the cavity is coated on said side wall surface with a film of phase change memory material forming a core including core volume bounded by the phase change material, and the core volume bounded by the phase change material is at least partially filled with a material selected from the group consisting of: (i) alumina; (ii) titania, (iii) titania and alumina. |
地址 |
Billerica MA US |