发明名称 |
Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials |
摘要 |
A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer. |
申请公布号 |
US9385309(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201414334015 |
申请日期 |
2014.07.17 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
Gottwald Matthias Georg;Kan Jimmy;Lee Kangho;Park Chando;Kang Seung Hyuk |
分类号 |
H01L29/82;H01L43/12;H01L43/08;G11C11/16;H01L43/10;H01L27/22 |
主分类号 |
H01L29/82 |
代理机构 |
Seyfarth Shaw LLP |
代理人 |
Seyfarth Shaw LLP |
主权项 |
1. A perpendicular magnetic tunnel junction (pMTJ) device, comprising:
a seed layer directly on a surface of a first electrode of the pMTJ device, the seed layer having a uniform predetermined crystal orientation at least along a growth axis and a substantially planar surface; a magnetic material on the substantially planar surface of the seed layer; a texture breaking layer on the magnetic material; and a spin polarizing layer on the texture breaking layer. |
地址 |
San Diego CA US |