发明名称 Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials
摘要 A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.
申请公布号 US9385309(B2) 申请公布日期 2016.07.05
申请号 US201414334015 申请日期 2014.07.17
申请人 QUALCOMM INCORPORATED 发明人 Gottwald Matthias Georg;Kan Jimmy;Lee Kangho;Park Chando;Kang Seung Hyuk
分类号 H01L29/82;H01L43/12;H01L43/08;G11C11/16;H01L43/10;H01L27/22 主分类号 H01L29/82
代理机构 Seyfarth Shaw LLP 代理人 Seyfarth Shaw LLP
主权项 1. A perpendicular magnetic tunnel junction (pMTJ) device, comprising: a seed layer directly on a surface of a first electrode of the pMTJ device, the seed layer having a uniform predetermined crystal orientation at least along a growth axis and a substantially planar surface; a magnetic material on the substantially planar surface of the seed layer; a texture breaking layer on the magnetic material; and a spin polarizing layer on the texture breaking layer.
地址 San Diego CA US