| 主权项 |
1. A semiconductor device comprising:
an IGBT having a first trench gate and an emitter layer formed at a front surface side of a substrate and having a collector layer formed at a rear surface side of the substrate; and a diode having a second trench gate and an anode layer formed at the front surface side of the substrate and having a cathode layer formed at the rear surface side of the substrate, wherein the second trench gate is insulated from the first trench gate, the first trench gate has a plurality of first stripe portions and a first annular portion surrounding the diode as viewed in plan, the second trench gate has a plurality of second stripe portions and a second annular portion opposed to the first annular portion and surrounding the plurality of second stripe portions as viewed in plan, the distance between the first annular portion and the second annular portion is constant, and the distance between the first annular portion and the second annular portion is equal to or smaller than the larger one of the inter-stripe distance between the plurality of first stripe portions and the inter-stripe distance between the plurality of second stripe portions. |
