Vertical-gate-all-around devices and method of fabrication thereof

摘要

Structures and methods are provided for forming bottom source/drain contact regions for nanowire devices. A nanowire is formed on a substrate. The nanowire extends substantially vertically relative to the substrate and is disposed between a top source/drain region and a bottom source/drain region. A first dielectric material is formed on the bottom source/drain region. A second dielectric material is formed on the first dielectric material. A first etching process is performed to remove part of the first dielectric material and part of the second dielectric material to expose part of the bottom source/drain region. A second etching process is performed to remove part of the first dielectric material under the second dielectric material to further expose the bottom source/drain region. A first metal-containing material is formed on the exposed bottom source/drain region. Annealing is performed to form a bottom contact region.

主权项

1. A method for fabricating nanowire devices on a substrate, the method comprising:
forming a nanowire on a substrate, the nanowire extending substantially vertically relative to the substrate and being disposed between a top source/drain region and a bottom source/drain region; forming a first dielectric material layer on the bottom source/drain region; forming a second dielectric material layer on the first dielectric material layer; performing a first etching process to remove part of the first dielectric material layer and part of the second dielectric material layer to expose part of the bottom source/drain region; performing a second etching process to remove part of the first dielectric material layer and create an undercut between the substrate and the second dielectric material layer; forming a first metal-containing material on the bottom source/drain region through the undercut; and performing annealing on the first metal-containing material and the bottom source/drain region to form a bottom contact region.