Semiconductor device

摘要

A semiconductor device has mesa form first and second p-type base regions and a floating p-type region provided in a surface layer of an n−-type drift layer. The first p-type base region and floating p-type region are separated by a first trench. The second p-type base region is separated from the floating p-type region by a second trench. The first and second p-type base regions are conductively connected to an emitter electrode. The floating p-type region is in a floating state electrically isolated from the emitter electrode. A first gate electrode is provided via a first gate insulating film inside the first trench. An emitter potential second gate electrode is provided via a second gate insulating film inside the second trench. Therefore, di/dt controllability when turning on the semiconductor device can be increased.

主权项

1. A semiconductor device, comprising:
a first conductivity type first semiconductor layer; a second conductivity type second semiconductor layer provided on the first semiconductor layer; a first conductivity type third semiconductor layer selectively provided in a surface layer of the second semiconductor layer on a side opposite to that of the first semiconductor layer; a second conductivity type fourth semiconductor layer selectively provided inside the third semiconductor layer; a first trench penetrating the third semiconductor layer and fourth semiconductor layer to reach the second semiconductor layer; a first conductivity type fifth semiconductor layer, selectively provided in a surface layer of the second semiconductor layer on the side opposite to that of the first semiconductor layer, separated from the third semiconductor layer by the first trench; a second trench reaching the second semiconductor layer from the surface of the fifth semiconductor layer on the side opposite to that of the first semiconductor layer; a first conductivity type sixth semiconductor layer, provided inside the fifth semiconductor layer, separated from the fifth semiconductor layer by the second trench; an emitter electrode conductively connected to the third semiconductor layer, fourth semiconductor layer, and sixth semiconductor layer and electrically isolated from the fifth semiconductor layer; a collector electrode conductively connected to the first semiconductor layer; a first gate electrode provided across a first gate insulating film inside the first trench; and a second gate electrode provided across a second gate insulating film inside the second trench and electrically connected to the emitter electrode, wherein the sixth semiconductor layer has a width that is less than that of the third semiconductor layer.