LC module layout arrangement for contact opening etch windows

摘要

A lay-out arrangement for LC modules in 3D semiconductor memories is described that avoids large step height. The arrangement creates insulating/conducting layer pairs with adjacent pairs differing in height by no more than the thickness of two insulating/conducting layer pairs.

主权项

1. A three-dimensional semiconductor memory structure comprising:
a plurality of LC modules, the modules comprising:
contact pads; andlayer-by-layer openings enabling connection with the contact pads, wherein: the LC modules are disposed on a plurality of levels and have a plurality of different heights, each LC module being formed from one or more pairs of alternating layers of conducting material and insulating material (OP layer pairs), wherein no two adjacent LC modules differ in height by an amount greater than a thickness of two OP layer pairs and at least two adjacent LC modules differ in height by the thickness of two OP layer pairs.