Semiconductor dies with reduced area consumption

摘要

The width of scribe lines may be reduced in semiconductor devices by applying a process technique in which trenches may be formed first from the rear side on the basis of a required width of the corresponding trenches, while subsequently it may be cut into the substrate from the front side on the basis of a reduced thickness of the corresponding saw blades, thereby also enabling a reduction of the scribe line width. Furthermore, contamination of the front side, i.e., of the metallization system, may be reduced, for instance, by performing an optional intermediate cleaning process.

主权项

1. A semiconductor device, comprising:
a semiconductor chip, said semiconductor chip comprising:
a substrate having a front side, a rear side, and first and second pairs of opposing sidewalls extending from said front side to said rear side, said first and second pairs of opposing sidewalls comprising respective first and second pairs of opposing front side sidewall portions that extend perpendicularly from said front side of said substrate and respective first and second pairs of opposing rear side sidewall portions that extend perpendicularly from said rear side of said substrate, wherein said substrate has a front side width and a front side length defined between said respective first and second pairs of opposing front side perpendicular sidewall portions and a rear side width and a rear side length defined between said respective first and second pairs of opposing rear side perpendicular sidewall portions, said front side width being greater than said rear side width, said front side length being greater than said rear side length, and each of said first pair of opposing sidewalls defining said front and rear side widths having a stepped configuration when viewed in cross-section;a metallization system positioned above said front side of said substrate and opposite of said rear side of said substrate, said metallization system comprising a contact structure and a plurality of metallization layers positioned between said contact structure and said front side of said substrate; and a package substrate electrically connected to said contact structure of said semiconductor chip.