Charged particle beam exposure apparatus

摘要

Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric illumination optical system to have an elongated section. The electron beam is then applied to a beam shaping aperture plate provided with a plurality of apertures arranged in a line, thereby generating a plurality of electron beams. Exposure of a predetermined pattern is performed on a semiconductor substrate by moving a stage device in a direction orthogonal to line patterns on the semiconductor substrate and turning the plurality of electron beams on or off in synchronization with the movement of the stage device by use of a blanker plate and a final aperture plate.

主权项

1. A charged particle beam exposure apparatus comprising:
a charged particle source configured to emit a charged particle beam, a beam shaping aperture plate including a plurality of apertures arranged in a line and being configured to shape the charged particle beam into a plurality of charged particle beams; a blanker plate including aperture portions and blanking electrodes and being configured to deflect the charged particle beams individually, the aperture portions being provided at portions corresponding to the apertures of the beam shaping aperture plate; a final aperture plate configured to block the charged particle beams deflected by the blanker plate and pass therethrough the charged particle beams not deflected by the blanker plate; a charged particle optical system configured to reduce in size the plurality of charged particle beams shaped by the beam shaping aperture plate and form an image thereof; a stage device configured to retain and move a semiconductor substrate on which a plurality of line patterns are formed at a certain pitch; an asymmetric illumination optical system placed between the charged particle source and the beam shaping aperture plate and configured to deform the charged particle beam emitted from the charged particle source into a beam having a section elongated along the line of the apertures of the beam shaping aperture plate; a controller configured to perform exposure of a predetermined pattern on the semiconductor substrate by moving the stage device and turning the plurality of charged particle beams on or off with the movement of the stage device; and a stage feedback deflector, provided below the final aperture plate, having a pair of electrode plates arranged along the line of the aperture portions of the beam shaping aperture plate, and configured to perform fine adjustment of the irradiation position of the electron beams to follow the line pattern of the sample; and a selecting deflector placed between the asymmetric illumination optical system and the beam shaping aperture plate and configured to change a position on the beam shaping aperture plate irradiated with the charged particle beam.