Cross-point memory device including multi-level cells and operating method thereof

摘要

A method of operating a cross-point memory device, having an array of multilevel cells, includes performing a first reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a first state and performing a second reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a second state. A difference between a level of a first voltage used in a first sensing operation and a level of a second voltage used in a second sensing operation in the first reading operation is different from a difference between a level of a third voltage used in a first sensing operation and a level of a fourth voltage used in a second sensing operation in the second reading operation.

主权项

1. A method of operating a cross-point memory device comprising a memory cell array comprising multilevel cells, the method comprising:
performing a first reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a first state; and performing a second reading operation with respect to the multilevel cells through a plurality of sensing operations to determine a second state, wherein a difference between a level of a first voltage used in a first sensing operation and a level of a second voltage used in a second sensing operation in the first reading operation is different from a difference between a level of a third voltage used in a first sensing operation and a level of a fourth voltage used in a second sensing operation in the second reading operation.