III-V device structure with multiple threshold voltage

摘要

A semiconductor structure containing a multiple threshold voltage III-V device is provided. The III-V device includes a III-V compound semiconductor core portion and a III-V compound semiconductor shell portion. The III-V compound semiconductor core and shell portions are virtually defect-free. The III-V compound semiconductor core portion of the III-V device is used for back-gating to achieve multiple threshold voltages. The III-V compound semiconductor shell portion of the III-V device is used as a channel material for a field effect transistor.

主权项

1. A semiconductor structure comprising:
a fin stack of, from bottom to top, a III-V compound semiconductor material fin portion, an insulating III-V compound material fin portion and a topmost III-V compound semiconductor material fin portion extending upwards from a surface of a bulk silicon substrate, wherein a dielectric material structure is present on each sidewall surface of said fin stack and each dielectric material structure has a topmost surface that is vertically offset and located at, or beneath, a bottommost surface of said topmost III-V compound semiconductor material fin portion; an insulating III-V compound layer straddling over a first portion of said topmost III-V compound semiconductor material fin portion; a III-V compound semiconductor layer on said insulating III-V compound layer; and a functional gate structure straddling over a portion of said III-V compound semiconductor layer, wherein a second portion of said topmost III-V compound semiconductor material fin portion is exposed.