发明名称 |
Semiconductor optical device. |
摘要 |
<p>A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a strained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.</p> |
申请公布号 |
EP0378098(A2) |
申请公布日期 |
1990.07.18 |
申请号 |
EP19900100100 |
申请日期 |
1990.01.03 |
申请人 |
HITACHI, LTD. |
发明人 |
OHTOSHI, TSUKURU;SAKANO, SHINJI;UOMI, KAZUHISA;CHINONE, NAOKI |
分类号 |
G02F1/025;G02B6/122;G02F1/015;G02F1/313;H01S5/00;H01S5/026;H01S5/0625;H01S5/10;H01S5/12;H01S5/14;H01S5/227;H01S5/34 |
主分类号 |
G02F1/025 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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