发明名称 Semiconductor optical device.
摘要 <p>A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a strained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.</p>
申请公布号 EP0378098(A2) 申请公布日期 1990.07.18
申请号 EP19900100100 申请日期 1990.01.03
申请人 HITACHI, LTD. 发明人 OHTOSHI, TSUKURU;SAKANO, SHINJI;UOMI, KAZUHISA;CHINONE, NAOKI
分类号 G02F1/025;G02B6/122;G02F1/015;G02F1/313;H01S5/00;H01S5/026;H01S5/0625;H01S5/10;H01S5/12;H01S5/14;H01S5/227;H01S5/34 主分类号 G02F1/025
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