PROCESS FOR MANUFACTURING SILICON BORON NITRIDE LAYERS FOR INTEGRATED SEMICONDUCTOR CIRCUITS

摘要

Silicon boron nitride layers, which can be used as intermetallisation and/or final passivation layers, are prepared by chemical vapour deposition in an electromagnetic alternating field using liquid starting compounds which already contain in molecular terms some of the target composition of the silicon boron nitride layer to be prepared. The silicon boron nitride layers prepared in this way have a permittivity epsilon whose value is less than 4� epsilon 0 and are notable for good insulation and barrier properties and a high breakdown strength. ��