| 摘要 |
PURPOSE:To provide a fine crystal silicon carbide film having a large energy gap besides low resistance while being usefull as an electronic material or a substrate material. CONSTITUTION:Tetramethyl silane and silane as a raw material gas and diboron or phosfine as a doping gas are introduced through a material gas introduction piping 4 and hydrogen gas is introduced through a piping 19 from a raw material gas container 2 inside a container box 1 into a plasma chamber, and a microwave is introduced from a microwave source 15 while generating a mannetic field by a magnet coil 12 in order to generate plasma. A radical in plasma reaches a substrate 9 so as to react for forming a film. |
