| 摘要 |
PURPOSE: To detect the end of polishing easily and with high accuracy, in the case of performing the etch back process to shave, for example, an interlayer insulating film by polishing, in the manufacture process of a semiconductor wafer. CONSTITUTION: Polishing is performed while supplying polishing solution, pressing a wafer 10 against the rotating polishing cloth 23 while rotating a retainer 3, retaining the wafer 10, where a metallic film is made through a thin barrier layer (TiN film) on the surface of a silicon oxide film where a contact hole is made, with this retainer 41. At this time, the surface temperature of the polishing cloth is detected by an infrared ray temperature sensor 5. Though the surface temperature of the polishing cloth goes up by frictional heat and the chemical reaction between the components of polishing liquid and a metallic layer, the chemical reaction ceases to occur and the temperature drops by the silicon oxide film being exposed, so the end of the polishing can be detected by monitoring the surface temperature. |
