Single ELOG growth transverse p-n junction nitride semiconductor laser

摘要

A vertical quantum well nitride laser-can be fabricated by ELOG (epitaxial lateral overgrowth), with the vertical quantum wells created by deposition over the vertical a-face of the laterally growing edges and forming the transverse junction in a single ELOG-MOCVD (metal organic chemical vapor deposition) growth step. Vertical quantum wells may be used for both GaN vertical cavity surface emitting lasers (VCSELs) and GaN edge emitting lasers.