Electron beam microprocessing method

摘要

Onto a surface of an Al_xGa_yIn_1-x-yAs_zP_1-z (0<=x, y, z<=1) layer including GaAs alone or an InP substrate, an electron beam controlled to an arbitrary electron beam diameter and current density is irradiated so as to selectively substitute or generate Ga₂O₃ for a natural oxide layer formed on the Al_xGa_yIn_1-x-yAs_zP_1-z, layer surface, then the Al_xGa_yIn_1-x-yAs_zP_1-z layer surface is dry-etched by a bromide in single atomic layer units, whereby the natural oxide layer other than the part substituted by the Ga₂O₃ and Al_xGa_yIn_1-x-yAs_zP_1-z substrate are removed.