| 摘要 |
A memory device is provided to reduce a leakage current by enabling a writing operation at a low voltage and by easily removing unnecessary residue in a gap between an electrode pattern and wordlines. A bitline(102) is formed on a substrate(100). A read wordline(106b) is formed on the bitline, insulated from the bitline. A bitline contact is positioned between the read wordlines, having a lower upper surface than the read wordline and connected to the bitline. An electrode pattern(160) is connected to the upper surface of the bitline contact, separated from the read wordline and extended in a direction confronting the upper surface of the read wordline. The electrode pattern is made of a material that has elasticity and is bent by a potential difference. A write wordline(148b) is formed on the electrode pattern, separated from the electrode pattern and confronting the read wordline and the electrode pattern. A contact tip is formed at both ends of the electrode pattern, separated from the read wordline and the write wordline and protruding toward the read wordline and the write wordline. A first interlayer dielectric pattern(104a) can be formed between the bitline and the read wordline to support the read wordline. A second interlayer dielectric pattern(118) can be formed between the first interlayer dielectric patterns, having a lower upper surface than the read wordline.
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