METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, AND NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To remarkably improve the manufacturing yield of self-standing substrates by enabling a self-standing substrate which is not practically used because the substrate has a penetrated pit or a penetrated crack to be subjected to a semiconductor element process, and to provide a valuable and inexpensive nitride semiconductor substrates. SOLUTION: A metal forming a nitride is stuck to a pit 8 or a crack penetrating from the front surface to the rear surface of a self-standing substrate 7 of a nitride semiconductor in a manufacturing process, and then a nitride is formed by nitriding the metal in order to bury the penetrated pit or crack by the formed nitride. COPYRIGHT: (C)2008,JPO&INPIT