| 摘要 |
A semiconductor chip (2) is encapsulated with resin into a plastic package (5) so as to form a semiconductor device (10) having the semiconductor chip (2) in the plastic package (5). The semiconductor device (10) is then received in a container (11) so that the container (11) is vacuumed up to a vacuum degree of 10<-6> or less. Thereafter, the semiconductor device (10) is baked at a temperature within a range of 165 DEG C to 175 DEG C for 6 hours or more by using a hot plate (13). Thus, this baking under the reduced pressure prevents generation of blisters and cracks on the plastic package (5). <IMAGE> |
