发明名称 MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME
摘要 A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe<SUB>1-x-y</SUB>Co<SUB>x</SUB>Ni<SUB>y </SUB>(0<=x+y<=1, 0<=x<=1, 0<=y<=1), and contains at least one additive element of V, Cr, and Mn in a range of 0<a<=20 at % (a is a content). An intermediate layer is disposed between the magnetization fixed layer and the magnetization variable layer and consists of a nonmagnetic material. The magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.
申请公布号 US2008231998(A1) 申请公布日期 2008.09.25
申请号 US20070858386 申请日期 2007.09.20
申请人 YOSHIKAWA MASATOSHI;KAI TADASHI;NAGASE TOSHIHIKO;KITAGAWA EIJI;KISHI TATSUYA;YODA HIROAKI 发明人 YOSHIKAWA MASATOSHI;KAI TADASHI;NAGASE TOSHIHIKO;KITAGAWA EIJI;KISHI TATSUYA;YODA HIROAKI
分类号 G11B5/33 主分类号 G11B5/33
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