| 摘要 |
A semiconductor device, that has a transistor region and a surge-protector region, includes: a substrate; a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; a gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer in the transistor region; and a surge-protector first electrode, a surge-protector second electrode, and a surge-protector third electrode formed on the second semiconductor layer in the surge-protector region, wherein the source electrode and the surge-protector second electrode are connected to each other, wherein the drain electrode and the surge-protector third electrode are connected to each other, wherein the surge-protector first electrode is formed between the surge-protector second electrode and the surge-protector third electrode, and wherein a distance between the surge-protector first electrode and the surge-protector third electrode is smaller than a distance between the gate electrode and the drain electrode. |
