Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices

摘要

A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

主权项

1. A method for fabricating a photovoltaic device, comprising:
forming a double layer transparent conductive oxide on a transparent substrate including:
forming a doped electrode layer on the substrate; andforming a buffer layer on the doped electrode layer by reducing dopant concentration to zero, the buffer layer including an oppositely doped form of a same material as the doped electrode layer, wherein the buffer layer includes a different doping concentration than the doped electrode layer; and forming a light-absorbing semiconductor structure including a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer, wherein the buffer layer includes a same material as the doped electrode layer, but is formed by a different processing method, such that a difference in work function between the doped electrode layer and the p-type semiconductor layer is reduced.