Electronic systems, thin film transistors, methods of manufacturing thin film transistors and thin film transistor arrays

摘要

Thin film transistors (TFT) and methods of manufacturing the same. A TFT includes a line-shaped gate of uniform thickness. A cross-section of the gate is curved where a side surface and a top surface meet. The gate includes one, or two or more gate lines.

主权项

1. A thin film transistor, comprising:
at least one gate line extending in a first direction; a gate insulating layer on the at least one gate line; a channel on the gate insulating layer; and a source and a drain spaced apart from each other on the gate insulating layer,
the source and the drain each respectively including a common portion that extends a second direction that crosses the first direction,at least one of the source and the drain including at least one extension portion, each extension portion extending in the first direction from a side of the common portion of a corresponding one of the source and drain over a corresponding one of the at least one gate line, wherein an end of the at least one extension portion protrudes upward, the channel is on the source and the drain, the source and the drain are directly on the gate insulating layer, and the channel has a curved cross-section that curves over the end of the at least one extension portion.