Method of manufacturing a semiconductor device by forming a film on a substrate

摘要

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; forming a third layer including the second layer and a discontinuous layer including a third element stacked on the second layer; and forming a fourth layer including the first element, the second element, the third element and a fourth element by supplying a gas containing the fourth element to the substrate to modify the third layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first element and the third element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate, wherein the first layer includes at least one of: a first discontinuous layer, a continuous layer, or a layer in which at least one of the first discontinuous layer or the continuous layer is overlapped,(b) forming a second layer that includes the first layer and a second discontinuous layer that includes the second element stacked on the first layer, wherein the second discontinuous layer is formed by supplying a second gas that includes the second element to the substrate,(c) forming a third layer that includes the second layer and a third discontinuous layer that includes the third element stacked on the second layer, wherein the third discontinuous layer is formed by supplying a third gas that includes the third element to the substrate, and(d) forming a fourth layer that includes the first element, the second element, the third element and the fourth element by supplying a fourth gas that includes the fourth element to the substrate to modify the third layer under a condition that a modifying reaction of the third layer by the fourth gas is not saturated.