发明名称 |
Gas-flow control method for plasma apparatus |
摘要 |
A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma. |
申请公布号 |
US9384949(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201414455019 |
申请日期 |
2014.08.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
Huang Zi-Neng;Lee Chang-Sheng;Liu Shen-Chieh;Tsuei Cherng-Chang |
分类号 |
H01J37/32;C23C16/455;H01L21/3065;H01L21/67 |
主分类号 |
H01J37/32 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A gas-flow control method for a plasma apparatus, comprising:
mounting a first adjusting mechanism on a gas-distribution plate, the first adjusting mechanism having a shaft, an elongate arm and a masking element, the shaft being detachably disposed on the gas-distribution plate, the arm extending outwardly from the shaft and being rotatable about the shaft, the masking element extending outwardly from the arm, wherein the gas-distribution plate comprises a plurality of exhaust openings; positioning the masking element such that the exhaust openings in a first area of the gas-distribution plate are masked by the masking element of the first adjusting mechanism; exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber; and generating an electric field to excite the gas in the plasma chamber into plasma. |
地址 |
Hsin-Chu TW |