发明名称 Gas-flow control method for plasma apparatus
摘要 A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma.
申请公布号 US9384949(B2) 申请公布日期 2016.07.05
申请号 US201414455019 申请日期 2014.08.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 Huang Zi-Neng;Lee Chang-Sheng;Liu Shen-Chieh;Tsuei Cherng-Chang
分类号 H01J37/32;C23C16/455;H01L21/3065;H01L21/67 主分类号 H01J37/32
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A gas-flow control method for a plasma apparatus, comprising: mounting a first adjusting mechanism on a gas-distribution plate, the first adjusting mechanism having a shaft, an elongate arm and a masking element, the shaft being detachably disposed on the gas-distribution plate, the arm extending outwardly from the shaft and being rotatable about the shaft, the masking element extending outwardly from the arm, wherein the gas-distribution plate comprises a plurality of exhaust openings; positioning the masking element such that the exhaust openings in a first area of the gas-distribution plate are masked by the masking element of the first adjusting mechanism; exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber; and generating an electric field to excite the gas in the plasma chamber into plasma.
地址 Hsin-Chu TW