FinFET with reduced source and drain resistance

摘要

A method for forming a semiconductor device comprises patterning and etching a fin in a semiconductor substrate, forming a gate stack over the fin, epitaxially growing a first semiconductor material on exposed portions of the fin, epitaxially growing a second semiconductor material on exposed portions of the first semiconductor material, and performing an etching process that removes exposed portions of the first semiconductor material and exposed portions of the second semiconductor material, the etching process is operative to remove portions of the first semiconductor material at a faster rate than the second semiconductor material such that a first cavity is formed adjacent to the fin.

主权项

1. A semiconductor device comprising:
a first semiconductor fin arranged on a substrate; a first layer of semiconductor material arranged on sidewalls of the first semiconductor fin; a second layer of semiconductor material arranged on the first layer of semiconductor material; a cavity formed adjacent to the fin partially defined by the first layer of semiconductor material, the second layer of semiconductor material, and the first semiconductor fin; and a conductive material arranged in the cavity, the conductive material partially defining an interface between the conductive material, the first fin, the first semiconductor material, and the second semiconductor material, the interface having a non-planar profile, wherein the conductive material contacts the first semiconductor material and the second semiconductor material.