Semiconductor memory device and method for manufacturing same

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate and including a first stacked portion, a second stacked portion and an intermediate layer, the first stacked portion and the second stacked portion including a plurality of electrode layers and a plurality of insulating layers, the intermediate layer provided between the first stacked portion and the second stacked portion; a column including a semiconductor film and a charge storage film; and an insulating part provided in the stacked body. The column has a first enlarged portion. The insulating part has a second enlarged portion surrounded by the intermediate layer, the second enlarged portion has a larger width than a width of the portion of the insulating part in the first stacked portion and the second stacked portion.

主权项

1. A semiconductor memory device, comprising:
a substrate; a stacked body provided on the substrate and including a first stacked portion, a second stacked portion and an intermediate layer, the first stacked portion and the second stacked portion including a plurality of electrode layers and a plurality of insulating layers, the electrode layers separately stacked each other, the insulating layers provided between the electrode layers, the intermediate layer provided between the first stacked portion and second stacked portion; a column including a semiconductor film and a charge storage film, the semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the charge storage film provided between the semiconductor film and the electrode layers, the column having a first enlarged portion surrounded by the intermediate layer, the first enlarged portion having a larger diameter than a diameter of a portion of the column in the first stacked portion and the second stacked portion; and an insulating part provided in the stacked body and extending in the stacking direction, the insulating part having a second enlarged portion surrounded by the intermediate layer, the second enlarged portion having a larger width than a width of the portion of the insulating part in the first stacked portion and the second stacked portion.