Structure and formation method of memory device

摘要

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a first electrode over the semiconductor substrate. The first electrode has a ring-shaped cross section. The semiconductor device structure also includes a resistance-switching layer over the first electrode and a second electrode over the resistance-switching layer.

主权项

1. A semiconductor device structure, comprising:
a semiconductor substrate; a first electrode over the semiconductor substrate, wherein the first electrode has a ring-shaped cross section and surrounds a recess; a dielectric layer over the semiconductor substrate and outside of the recess; a planarization layer filled in the recess that is surrounded by the first electrode; a resistance-switching layer located above and in direct contact with the first electrode, the planarization layer and the dielectric layer, wherein the planarization layer and the dielectric layer are substantially free of oxygen; and a second electrode over the resistance-switching layer.