| 发明名称 | Nonvolatile semiconductor memory device | ||
| 摘要 | According to one embodiment, a nonvolatile semiconductor memory device includes a first memory cell and a controller. The controller controls a write operation. The write operation includes a first program to write data into the first memory cell, and a first verification to verify the first program. when a power voltage has become lower than a first voltage during the execution of the first verification for the first memory cell, the controller executes a second verification to verify the first program for the first memory cell. | ||
| 申请公布号 | US9406395(B1) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514844684 | 申请日期 | 2015.09.03 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Kodama Takuyo;Hosoya Masahiro;Hamano Tomoyuki |
| 分类号 | G11C16/34;G11C16/30 | 主分类号 | G11C16/34 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P |
| 主权项 | 1. A nonvolatile semiconductor memory device comprising: a first memory cell; and a controller which controls a write operation, wherein the write operation includes a first program to write data into the first memory cell, and a first verification to verify the first program, and when a power voltage has become lower than a first voltage during the execution of the first verification for the first memory cell, the controller executes a second verification to verify the first program for the first memory cell. | ||
| 地址 | Minato-ku JP | ||