摘要 |
Provided is a method for manufacturing graphene grown on a substrate, comprising the following steps: (a) preparing a metal layer on a substrate; (b) supplying carbon-containing gas and etching gas and conducting electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD); (c) supplying etching gas for metal when supplying the carbon-containing gas so as to grow graphene on the metal layer; and (d) growing graphene on the substrate without the metal layer by continuously removing all the metals in the metal layer by the etching gas while continuously conducting ECR-CVD in the process of the step (c). |