| 发明名称 | Mask blank, transfer mask, and methods of manufacturing the same | ||
| 摘要 | Provided is a mask blank in which a thin film for transfer pattern formation is provided on a main surface of a transparent substrate. The thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen. The thin film has as its surface layer an oxide layer with an oxygen content higher than that of the thin film of a region other than the surface layer. The thin film is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side. The oxide layer is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side. | ||
| 申请公布号 | US9470971(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201314391345 | 申请日期 | 2013.05.09 |
| 申请人 | HOYA CORPORATION | 发明人 | Umezawa Teiichiro;Ishiyama Masafumi |
| 分类号 | G03F1/26;C23C14/00;C23C14/06;C23C14/22 | 主分类号 | G03F1/26 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A mask blank, comprising: a transparent substrate having a main surface; and a thin film for forming a transfer pattern on the main surface of the transparent substrate; wherein the thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen, wherein the thin film has as a surface layer an oxide layer having an oxygen content higher than an oxygen content of the thin film of a region excluding the surface layer, wherein the thin film is formed so that a thickness of an outer peripheral portion is greater than a thickness of a central portion on a side of the main surface, and wherein the oxide layer is formed so that a thickness of the outer peripheral portion is greater than a thickness of the central portion on the side of the main surface. | ||
| 地址 | Tokyo JP | ||