发明名称 |
Enhancement of P-type metal-oxide-semiconductor field effect transistors |
摘要 |
A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are selected to define a first carrier mobility in the tensile strained layer and a second carrier mobility in the compressed layer.
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申请公布号 |
US6916727(B2) |
申请公布日期 |
2005.07.12 |
申请号 |
US20020177571 |
申请日期 |
2002.06.21 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
LEITZ CHRISTOPHER W.;LEE MINJOO L.;FITZGERALD EUGENE A. |
分类号 |
H01L21/20;H01L21/8238;H01L27/092;H01L29/10;H01L29/78;H01L29/80;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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